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Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption

Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption
Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption
Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption
Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption
Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption
Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption

Samsung 990 PRO NVMe PCIe 4.0 x4 M.2 2280 Internal SSD 1TB MZ-V9P1T0BW, Up to 7450MB/s Read & 6900MB/s Write, V-NAND, AES 256-Bit Encryption

Capacity:
Delivery to or. Chișinău
Pickup point delivery
Thursday, 01.10.2026 (1 working days)
30 MDL
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Samsung
7549.00 MDL
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Description

The Samsung 990 PRO (MZ-V9P1T0BW) is a high-performance internal solid state drive with a 1 TB capacity, designed to significantly accelerate data access and system responsiveness. Utilizing the NVMe PCIe 4.0 x4 interface and Samsung V-NAND flash memory, it achieves sequential read speeds of up to 7450 MB/s and write speeds of 6900 MB/s, which allows you to load massive files or launch demanding applications almost instantly. This M.2 2280 drive is remarkably compact, weighing only 9 g and measuring 80 x 22 x 2.3 mm, making it a discreet addition to your motherboard. For those prioritizing security, the integrated AES 256-bit encryption ensures your stored data remains protected. Because it is backward compatible with PCIe 3.0, you can install it in older systems while planning for a future hardware upgrade. Its exceptional random read and write performance, reaching up to 1.55 million IOPS, makes this 1 TB model an ideal choice for power users, content creators, and gamers who handle complex workloads.

Features

General Specifications

Form Factor
M.2 2280
Interface
PCIe 4.0 x4
NVMe Support
Yes
Capacity
1 TB

Performance

Max Sequential Read Speed
7450 MB/s
Max Sequential Write Speed
6900 MB/s
Random Write (4KB, QD32)
1,550,000 IOPS
Random Read (4KB, QD32)
1,200,000 IOPS

Physical Characteristics

Heatsink
Not included
Dimensions
80 x 22 x 2.3 mm
Weight
9 g

Reliability & Durability

MTBF
1.5 million hours
TBW (Total Bytes Written)
600 TB

Technical Details

Controller
Samsung Pascal
DRAM Cache
Yes
Encryption Support
AES 256-bit
Memory Type
V-NAND
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